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| EMC2DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMC5DXV5T1 series, two complementary BRT devices are housed in the SOT-553 package which is ideal for low power surface mount applications where board space is at a premium. * Simplifies Circuit Design * Reduces Board Space * Reduces Component Count * Available in 8 mm, 7 inch Tape and Reel * Lead Free MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc xx = Specific Device Code D = Date Code http://onsemi.com 3 R1 2 R2 1 R2 Q1 R1 4 Q2 5 5 1 SOT-553 CASE 463B MARKING DIAGRAM 5 xx D 1 ORDERING INFORMATION Device EMC2DXV5T1 Package SOT-553 SOT-553 SOT-553 SOT-553 Shipping 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance - Junction-to-Ambient Junction and Storage Temperature 1. FR-4 @ Minimum Pad Symbol PD 357 (Note 1) 2.9 (Note 1) RqJA 350 (Note 1) mW mW/C C/W Max Unit EMC2DXV5T5 EMC5DXV5T1 EMC5DXV5T5 Symbol PD Max 500 (Note 1) 4.0 (Note 1) Unit mW mW/C C/W C For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. RqJA TJ, Tstg 250 (Note 1) -55 to +150 Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2003 1 September, 2003 - Rev. 1 Publication Order Number: EMC2DXV5T1/D EMC2DXV5T1, EMC5DXV5T1 DEVICE MARKING AND RESISTOR VALUES Transistor 1 - PNP Device EMC2DXV5T1 EMC5DXV5T1 Marking UC U5 R1 (K) 22 4.7 R2 (K) 22 10 Transistor 2 - NPN R1 (K) 22 47 R2 (K) 22 47 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) EMC2DXV5T1 EMC5DXV5T1 ICBO ICEO IEBO - - - - - - - - 100 500 0.2 1.0 nAdc nAdc mAdc ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) EMC2DXV5T1 EMC5DXV5T1 V(BR)CBO V(BR)CEO hFE VCE(SAT) VOL VOH R1 R1/R2 50 50 60 20 - - 4.9 15.4 3.3 0.8 0.38 - - 100 35 - - - 22 4.7 1.0 0.47 - - - - 0.25 0.2 - 28.6 6.1 1.2 0.56 Vdc Vdc Vdc kW Vdc Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor Resistor Ratio EMC2DXV5T1 EMC5DXV5T1 EMC2DXV5T1 EMC5DXV5T1 Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Characteristic Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0, IC = 5.0 mA) EMC2DXV5T1 EMC5DXV5T1 Symbol ICBO ICEO IEBO Min - - - - Typ - - - - Max 100 500 0.2 0.1 Unit nAdc nAdc mAdc ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) EMC2DXV5T1 EMC5DXV5T1 V(BR)CBO V(BR)CEO hFE VCE(SAT) VOL VOH R1 R1/R2 50 50 60 80 - - 4.9 15.4 33 0.8 0.8 - - 100 140 - - - 22 47 1.0 1.0 - - - - 0.25 0.2 - 28.6 61 1.2 1.2 Vdc Vdc Vdc kW Vdc Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor Resistor Ratio EMC2DXV5T1 EMC5DXV5T1 EMC2DXV5T1 EMC5DXV5T1 http://onsemi.com 2 EMC2DXV5T1, EMC5DXV5T1 250 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 50 0 -50 RqJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve http://onsemi.com 3 EMC2DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS -- EMC2DXV5T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE, DC CURRENT GAIN 1000 VCE = 10 V 1 TA = -25C 25C TA = 75C 100 25C -25C 75C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 mA TA = 25C 100 75C 10 25C TA = -25C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 10 75C 25C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 4 EMC2DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS -- EMC2DXV5T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C hFE, DC CURRENT GAIN 25C 0.1 75C 1000 VCE = 10 V TA = 75C 25C -25C 100 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz IE = 0 mA TA = 25C 100 75C IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 25C TA = -25C Cob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 5 EMC2DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS -- EMC5DXV5T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 100 1000 VCE = 10 V TA = 75C -25C 25C TA = 75C 0.1 -25C 25C 10 0.01 0 10 20 30 40 50 60 1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 12 10 Cob , CAPACITANCE (pF) 8 6 4 SERIES 1 2 0 0 5 10 20 30 15 25 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 f = 1 MHz IE = 0 mA TA = 25C 100 IC, COLLECTOR CURRENT (mA) 75C 10 1 VO = 5 V TA = -25C 25C 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) 10 12 0.1 0.01 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage http://onsemi.com 6 EMC2DXV5T1, EMC5DXV5T1 TYPICAL ELECTRICAL CHARACTERISTICS -- EMC5DXV5T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE, DC CURRENT GAIN 1000 VCE = 10 V TA = 75C 25C -25C 1 TA = -25C 0.1 25C 75C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 16. VCE(sat) versus IC Figure 17. DC Current Gain 1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25C 100 75C 10 1 0.1 0.01 25C TA = -25C VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 18. Output Capacitance Figure 19. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 20. Input Voltage versus Output Current http://onsemi.com 7 EMC2DXV5T1, EMC5DXV5T1 INFORMATION FOR USING THE SOT-553 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.3 0.0118 0.45 0.0177 1.0 0.0394 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 1.35 0.0531 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches SOT-553 SOT-553 POWER DISSIPATION The power dissipation of the SOT-553 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RqJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-553 package, PD can be calculated as follows: PD = TJ(max) - TA RqJA SOLDERING PRECAUTIONS The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The 833C/W for the SOT-553 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-553 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad(R). Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 8 EMC2DXV5T1, EMC5DXV5T1 PACKAGE DIMENSIONS SOT-553 XV5 SUFFIX 5-LEAD PACKAGE CASE 463B-01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 A -X- C K 4 5 1 2 3 B -Y- S D G 5 PL M J XY 0.08 (0.003) DIM A B C D G J K S http://onsemi.com 9 EMC2DXV5T1, EMC5DXV5T1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 10 EMC2DXV5T1/D |
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